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IRFH7446TRPBF

IRFH7446TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFH7446TRPBF
  • Package: 8-TQFN Exposed Pad
  • Datasheet: PDF
  • Stock: 698
  • Description: IRFH7446TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.3m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 3.9V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 3174pF @ 25V
Current - Continuous Drain (Id) @ 25°C 85A Tc
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
Rise Time 37ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 26 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 85A
Threshold Voltage 2.2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 468A
Height 1.17mm
Length 5.85mm
Width 5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TQFN Exposed Pad
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series HEXFET®, StrongIRFET™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 3.3MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Number of Elements 1
Power Dissipation-Max 78W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 78W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
See Relate Datesheet