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  • IRFH7932TR2PBF

IRFH7932TR2PBF

MOSFET N-CH 30V 24A PQFN56


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFH7932TR2PBF
  • Package: 8-PowerVDFN
  • Datasheet: PDF
  • Stock: 945
  • Description: MOSFET N-CH 30V 24A PQFN56 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Supplier Device Package PQFN (5x6) Single Die
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2008
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 3.3MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.4W Ta
Element Configuration Single
Power Dissipation 3.1W
Turn On Delay Time 20 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 4270pF @ 15V
Current - Continuous Drain (Id) @ 25°C 24A Ta 104A Tc
Gate Charge (Qg) (Max) @ Vgs 51nC @ 4.5V
Rise Time 48ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 24A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 4.27nF
Recovery Time 32 ns
Drain to Source Resistance 3.3mOhm
Rds On Max 3.3 mΩ
Nominal Vgs 1.8 V
Height 939.8μm
Length 5mm
Width 5.1054mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet