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  • IRFH8318TR2PBF

IRFH8318TR2PBF

MOSFET N-CH 30V 21A 5X6 PQFN


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFH8318TR2PBF
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 270
  • Description: MOSFET N-CH 30V 21A 5X6 PQFN (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Supplier Device Package PQFN (5x6)
Packaging Cut Tape (CT)
Published 2008
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 3.1MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.6W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 3.6W
Turn On Delay Time 15 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.35V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 3180pF @ 10V
Current - Continuous Drain (Id) @ 25°C 27A Ta 120A Tc
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Rise Time 33ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 27A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 3.18nF
Recovery Time 24 ns
Drain to Source Resistance 3.1mOhm
Rds On Max 3.1 mΩ
Nominal Vgs 1.8 V
Height 1.17mm
Length 5.85mm
Width 5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet