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IRFH8321TRPBF

MOSFET N CH 30V 21A PQFN5X6


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFH8321TRPBF
  • Package: 8-TQFN Exposed Pad
  • Datasheet: PDF
  • Stock: 960
  • Description: MOSFET N CH 30V 21A PQFN5X6 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TQFN Exposed Pad
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Power Dissipation-Max 3.4W Ta 54W Tc
Element Configuration Single
Power Dissipation 3.4W
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.9m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 10V
Current - Continuous Drain (Id) @ 25°C 21A Ta 83A Tc
Gate Charge (Qg) (Max) @ Vgs 59nC @ 10V
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.8 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 21A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet