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  • IRFH8330TRPBF

IRFH8330TRPBF

MOSFET N-CH 30V 56A 5X6 PQFN


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFH8330TRPBF
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 961
  • Description: MOSFET N-CH 30V 56A 5X6 PQFN (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.3W Ta 35W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.3W
Case Connection DRAIN
Turn On Delay Time 9.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.6m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1450pF @ 25V
Current - Continuous Drain (Id) @ 25°C 17A Ta 56A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.7 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 56A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 25A
Drain-source On Resistance-Max 0.0066Ohm
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 52 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet