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  • IRFH9310TRPBF

IRFH9310TRPBF

IRFH9310TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFH9310TRPBF
  • Package: 8-PowerVDFN
  • Datasheet: PDF
  • Stock: 466
  • Description: IRFH9310TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.1W
Case Connection DRAIN
Turn On Delay Time 25 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.6m Ω @ 21A, 10V
Vgs(th) (Max) @ Id 2.4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 5250pF @ 15V
Current - Continuous Drain (Id) @ 25°C 21A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 58nC @ 4.5V
Rise Time 47ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 70 ns
Turn-Off Delay Time 65 ns
Continuous Drain Current (ID) 21A
Threshold Voltage -1.9V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 40A
Drain-source On Resistance-Max 0.0046Ohm
Drain to Source Breakdown Voltage -30V
Nominal Vgs -1.9 V
Height 950μm
Length 6mm
Width 5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 2 (1 Year)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-N3
Number of Elements 1
Power Dissipation-Max 3.1W Ta
See Relate Datesheet