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IRFHM4231TRPBF

MOSFET N-CH 25V 40A PQFN


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFHM4231TRPBF
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 832
  • Description: MOSFET N-CH 25V 40A PQFN (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 13 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Base Part Number IRFHM4231
JESD-30 Code S-PDSO-N5
Number of Elements 1
Power Dissipation-Max 2.7W Ta 29W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 8.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.4m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.1V @ 35μA
Input Capacitance (Ciss) (Max) @ Vds 1270pF @ 13V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 28ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.9 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 22A
Threshold Voltage 1.6V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0046Ohm
DS Breakdown Voltage-Min 25V
Avalanche Energy Rating (Eas) 42 mJ
Height 900μm
Length 3.3mm
Width 5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet