English

All Products

View All >>
  • IRFHM4234TRPBF

IRFHM4234TRPBF

MOSFET N-CH 25V 20A PQFN


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFHM4234TRPBF
  • Package: 8-TQFN Exposed Pad
  • Datasheet: PDF
  • Stock: 506
  • Description: MOSFET N-CH 25V 20A PQFN (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TQFN Exposed Pad
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series FASTIRFET™, HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 4.4MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Number of Elements 1
Power Dissipation-Max 2.8W Ta 28W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.8W
Case Connection DRAIN
Turn On Delay Time 7.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.4m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.1V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1011pF @ 13V
Current - Continuous Drain (Id) @ 25°C 20A Ta
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 30ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.3 ns
Turn-Off Delay Time 8 ns
Continuous Drain Current (ID) 20A
Threshold Voltage 1.6V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 63A
Pulsed Drain Current-Max (IDM) 270A
Avalanche Energy Rating (Eas) 39 mJ
Height 900μm
Length 3.3mm
Width 3.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet