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  • IRFHM830TR2PBF

IRFHM830TR2PBF

MOSFET N-CH 30V 21A PQFN


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFHM830TR2PBF
  • Package: 8-VQFN Exposed Pad
  • Datasheet: PDF
  • Stock: 444
  • Description: MOSFET N-CH 30V 21A PQFN (Kg)

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Shipping Cost

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Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-VQFN Exposed Pad
Number of Pins 8
Packaging Cut Tape (CT)
Published 2005
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 2.7W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation 37W
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.35V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 2155pF @ 25V
Current - Continuous Drain (Id) @ 25°C 21A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Rise Time 25ns
Fall Time (Typ) 9.2 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 21A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Recovery Time 26 ns
Nominal Vgs 1.8 V
Height 990.6μm
Length 3.2766mm
Width 3.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet