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  • IRFHM830TRPBF

IRFHM830TRPBF

MOSFET N-CH 30V 21A PQFN


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFHM830TRPBF
  • Package: 8-VQFN Exposed Pad
  • Datasheet: PDF
  • Stock: 470
  • Description: MOSFET N-CH 30V 21A PQFN (Kg)

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Details

Tags

Parameters
Rise Time 25ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9.2 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 21A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 40A
Drain to Source Breakdown Voltage 30V
Nominal Vgs 1.8 V
Height 1mm
Length 3.3mm
Width 3.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-VQFN Exposed Pad
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 6MOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code S-PDSO-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.7W Ta 37W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.7W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.35V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 2155pF @ 25V
Current - Continuous Drain (Id) @ 25°C 21A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
See Relate Datesheet