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  • IRFI1310NPBF

IRFI1310NPBF

IRFI1310NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFI1310NPBF
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 412
  • Description: IRFI1310NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2003
Series HEXFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating 36A
Number of Elements 1
Power Dissipation-Max 56W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 45W
Case Connection ISOLATED
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 36m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Rise Time 56ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 24A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 22A
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Avalanche Energy Rating (Eas) 420 mJ
Isolation Voltage 2.5kV
Nominal Vgs 4 V
Height 9.8mm
Length 10.6172mm
Width 4.826mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet