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IRFI4019HG-117P

MOSFET 2N-CH 150V 8.7A TO-220FP


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFI4019HG-117P
  • Package: TO-220-5 Full Pack (Formed Leads)
  • Datasheet: PDF
  • Stock: 562
  • Description: MOSFET 2N-CH 150V 8.7A TO-220FP (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-5 Full Pack (Formed Leads)
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Max Power Dissipation 18W
Terminal Position SINGLE
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 18W
Case Connection ISOLATED
Turn On Delay Time 7 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 95m Ω @ 5.2A, 10V
Vgs(th) (Max) @ Id 4.9V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 810pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 6.6ns
Drain to Source Voltage (Vdss) 150V
Fall Time (Typ) 3.1 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 8.7A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 34A
Avalanche Energy Rating (Eas) 77 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet