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  • IRFI4229PBF

IRFI4229PBF

IRFI4229PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFI4229PBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 796
  • Description: IRFI4229PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Length 10.63mm
Width 4.83mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2008
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN OVER NICKEL
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Number of Elements 1
Power Dissipation-Max 46W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 46W
Case Connection ISOLATED
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 46m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4480pF @ 25V
Current - Continuous Drain (Id) @ 25°C 19A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 17ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 19A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.046Ohm
Drain to Source Breakdown Voltage 250V
Pulsed Drain Current-Max (IDM) 72A
Avalanche Energy Rating (Eas) 110 mJ
Height 9.8mm
See Relate Datesheet