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  • IRFI540NPBF

IRFI540NPBF

IRFI540NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFI540NPBF
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 206
  • Description: IRFI540NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Rise Time 39ns
Packaging Tube
Drive Voltage (Max Rds On,Min Rds On) 10V
Published 1998
Vgs (Max) ±20V
Series HEXFET®
Fall Time (Typ) 33 ns
Turn-Off Delay Time 44 ns
Continuous Drain Current (ID) 20A
JESD-609 Code e3
Threshold Voltage 4V
Part Status Active
JEDEC-95 Code TO-220AB
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Gate to Source Voltage (Vgs) 20V
Number of Terminations 3
Drain-source On Resistance-Max 0.052Ohm
Drain to Source Breakdown Voltage 100V
Termination Through Hole
Dual Supply Voltage 100V
Recovery Time 250 ns
Isolation Voltage 2.5kV
ECCN Code EAR99
Nominal Vgs 4 V
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Height 9.8mm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Length 10.6172mm
Subcategory FET General Purpose Power
Width 4.826mm
Voltage - Rated DC 100V
Radiation Hardening No
Technology MOSFET (Metal Oxide)
REACH SVHC No SVHC
Peak Reflow Temperature (Cel) 260
RoHS Status ROHS3 Compliant
Current Rating 20A
Lead Free Lead Free
Time@Peak Reflow Temperature-Max (s) 40
Number of Elements 1
Power Dissipation-Max 54W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 42W
Case Connection ISOLATED
Turn On Delay Time 8.2 ns
Factory Lead Time 12 Weeks
FET Type N-Channel
Mount Through Hole
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 52m Ω @ 11A, 10V
Mounting Type Through Hole
Vgs(th) (Max) @ Id 4V @ 250μA
Package / Case TO-220-3 Full Pack
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V
Number of Pins 3
Current - Continuous Drain (Id) @ 25°C 20A Tc
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Gate Charge (Qg) (Max) @ Vgs 94nC @ 10V
See Relate Datesheet