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  • IRFI640GPBF

IRFI640GPBF

Single N-Channel 200 V 0.18 Ohms Flange Mount Power Mosfet - TO-220FP


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRFI640GPBF
  • Package: TO-220-3 Full Pack, Isolated Tab
  • Datasheet: PDF
  • Stock: 537
  • Description: Single N-Channel 200 V 0.18 Ohms Flange Mount Power Mosfet - TO-220FP (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Number of Pins 3
Supplier Device Package TO-220-3
Weight 6.000006g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 180mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 40W Tc
Element Configuration Single
Power Dissipation 40W
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 180mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9.8A Tc
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Rise Time 51ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 36 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 9.8A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Input Capacitance 1.3nF
Isolation Voltage 2.5kV
Drain to Source Resistance 180mOhm
Rds On Max 180 mΩ
Height 9.8mm
Length 10.63mm
Width 4.83mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet