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IRFI9540GPBF

MOSFET P-CH 100V 11A TO220FP


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRFI9540GPBF
  • Package: TO-220-3 Full Pack, Isolated Tab
  • Datasheet: PDF
  • Stock: 581
  • Description: MOSFET P-CH 100V 11A TO220FP (Kg)

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Shipping Cost

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Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Number of Pins 3
Supplier Device Package TO-220-3
Weight 6.000006g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 200MOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC -100V
Technology MOSFET (Metal Oxide)
Current Rating -13A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 48W Tc
Element Configuration Single
Power Dissipation 42W
Turn On Delay Time 24 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 200mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 61nC @ 10V
Rise Time 110ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 86 ns
Turn-Off Delay Time 51 ns
Continuous Drain Current (ID) -11A
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -100V
Input Capacitance 1.4nF
Drain to Source Resistance 200mOhm
Rds On Max 200 mΩ
Height 9.8mm
Length 10.63mm
Width 4.83mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet