All Products
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Integrated Circuits (ICs)
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Connectors
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Discrete Semiconductors
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Capacitors
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RF/IF & RFID
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- Filters
Vishay Siliconix(2369)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI3127DV-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | 2017 | TrenchFET® | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | SOT-23-6 Thin, TSOT-23-6 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | YES | R-PDSO-G6 | 1 | SINGLE WITH BUILT-IN DIODE | MO-193AA | 2W Ta 4.2W Tc | SWITCHING | 0.089Ohm | 60V | SILICON | P-Channel | 89m Ω @ 1.5A, 4.5V | 3V @ 250μA | 833pF @ 20V | 30nC @ 10V | 5.1A | 3.5A Ta 13A Tc | 60V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SI2308BDS-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | No | 3 | TO-236-3, SC-59, SOT-23-3 | Unknown | 1.12mm | 1.4mm | 156MOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 3 | 1 | FET General Purpose Powers | 1 | Single | 1.09W | 4 ns | 1V | 1.09W Ta 1.66W Tc | 1.9A | 150°C | SWITCHING | 10 ns | SILICON | N-Channel | 156m Ω @ 1.9A, 10V | 3V @ 250μA | 190pF @ 30V | 6.8nC @ 10V | 16ns | 16 ns | 20V | 60V | 2.3A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
| SIHA22N60AE-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | E | Active | 1 (Unlimited) | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | 33W Tc | N-Channel | 180m Ω @ 11A, 10V | 4V @ 250μA | 1451pF @ 100V | 96nC @ 10V | 20A Tc | 600V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA468DJ-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | TrenchFET® Gen IV | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | PowerPAK® SC-70-6 | unknown | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 19W Tc | N-Channel | 8.4m Ω @ 11A, 10V | 2.4V @ 250μA | 1290pF @ 15V | 16nC @ 4.5V | 37.8A Tc | 30V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8425DB-T1-E1 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 21 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | TrenchFET® | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 4 | 4-UFBGA, WLCSP | 23mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | 260 | 30 | 1 | Other Transistors | Single | 2.7W | 50 ns | 1.1W Ta 2.7W Tc | 9.3A | 600 ns | P-Channel | 23m Ω @ 2A, 4.5V | 900mV @ 250μA | 2800pF @ 10V | 110nC @ 10V | 50ns | 200 ns | 10V | -20V | 20V | 1.8V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||
| SI2316BDS-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | No | 3 | TO-236-3, SC-59, SOT-23-3 | 1.02mm | 1.4mm | 50mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 3 | 1 | FET General Purpose Powers | 1 | Single | 1.25W | 20 ns | 1.25W Ta 1.66W Tc | 3.9A | SWITCHING | 11 ns | SILICON | N-Channel | 50m Ω @ 3.9A, 10V | 3V @ 250μA | 350pF @ 15V | 9.6nC @ 10V | 65ns | 65 ns | 20V | 30V | 4.5A | 4.5A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| SIHB22N60E-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Surface Mount | Tube | 2013 | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | 3 | R-PSSO-G2 | 1 | 1 | Single | 18 ns | 227W Tc | 21A | SWITCHING | 600V | 66 ns | SILICON | N-Channel | 180m Ω @ 11A, 10V | 4V @ 250μA | 1920pF @ 100V | 86nC @ 10V | 68ns | 54 ns | 20V | 21A Tc | 600V | 56A | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| SIHP22N60E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2012 | E | Active | 1 (Unlimited) | 3 | 10.51mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.65mm | 180mOhm | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | TO-220AB | Single | 227W | 18 ns | 2V | 227W Tc | 21A | SWITCHING | 600V | 59 ns | SILICON | N-Channel | 180m Ω @ 11A, 10V | 4V @ 250μA | 1920pF @ 100V | 86nC @ 10V | 68ns | 54 ns | 20V | 21A Tc | 600V | 56A | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| SIHP12N50C-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2007 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-220-3 | Unknown | 555mOhm | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 260 | 40 | 3 | 1 | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 208W | 18 ns | 3V | 208W Tc | 12A | SWITCHING | 23 ns | SILICON | N-Channel | 555m Ω @ 4A, 10V | 5V @ 250μA | 1375pF @ 25V | 48nC @ 10V | 35ns | 6 ns | 500V | 12A Tc | 28A | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| SIHP35N60E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tube | E | Active | 1 (Unlimited) | ROHS3 Compliant | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | 250W Tc | N-Channel | 94m Ω @ 17A, 10V | 4V @ 250μA | 2760pF @ 100V | 132nC @ 10V | 32A Tc | 600V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG23N60E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tube | 2017 | E | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-247-3 | 158mOhm | Through Hole | 38.000013g | -55°C~150°C TA | MOSFET (Metal Oxide) | NO | R-PSFM-T3 | 1 | 1 | TO-247AC | DRAIN | 227W Tc | 23A | SWITCHING | 600V | SILICON | N-Channel | 158m Ω @ 12A, 10V | 4V @ 250μA | 2418pF @ 100V | 95nC @ 10V | 23A Tc | 600V | 63A | 353 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG47N65E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2014 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | 3 | TO-247-3 | Through Hole | 38.000013g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | 1 | TO-247AC | Single | 417W | 47 ns | 417W Tc | 47A | SWITCHING | 0.072Ohm | 650V | 156 ns | SILICON | N-Channel | 72m Ω @ 24A, 10V | 4V @ 250μA | 5682pF @ 100V | 273nC @ 10V | 87ns | 103 ns | 20V | 47A Tc | 650V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| SI2334DS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | TrenchFET® | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | No | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 3 | FET General Purpose Powers | 1 | SINGLE WITH BUILT-IN DIODE | 1.3W | 400mV | 1.3W Ta 1.7W Tc | 4.9A | SWITCHING | 0.044Ohm | SILICON | N-Channel | 44m Ω @ 4.2A, 4.5V | 1V @ 250μA | 634pF @ 15V | 10nC @ 4.5V | 10ns | 8 ns | 8V | 400 mV | 4.9A Tc | 30V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||
| SIHG73N60AE-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tube | E | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | 25.11mm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 417W | 43 ns | 417W Tc | 60A | 150°C | 212 ns | N-Channel | 40m Ω @ 36.5A, 10V | 4V @ 250μA | 5500pF @ 100V | 394nC @ 10V | 30V | 600V | 60A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP33N60EF-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2014 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-220-3 | Unknown | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | 1 | 1 | TO-220AB | Single | 28 ns | 4V | 278W Tc | 33A | SWITCHING | 0.098Ohm | 600V | 161 ns | SILICON | N-Channel | 98m Ω @ 16.5A, 10V | 4V @ 250μA | 3454pF @ 100V | 155nC @ 10V | 43ns | 48 ns | 20V | 33A Tc | 600V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IRFR420APBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tube | 2006 | Active | 1 (Unlimited) | 2 | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | Unknown | 2.39mm | 6.22mm | 300mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | GULL WING | 260 | 40 | 3 | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 83W | 8.1 ns | 4.5V | 83W Tc | 3.3A | SWITCHING | 16 ns | SILICON | N-Channel | 3 Ω @ 1.5A, 10V | 4.5V @ 250μA | 340pF @ 25V | 17nC @ 10V | 12ns | 13 ns | 30V | 500V | 3.3A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||
| SIHD2N80E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Cut Tape (CT) | E | Active | 1 (Unlimited) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.507mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 62.5W | 11 ns | 62.5W Tc | 2.8A | 150°C | 19 ns | N-Channel | 2.75 Ω @ 1A, 10V | 4V @ 250μA | 315pF @ 100V | 19.6nC @ 10V | 30V | 800V | 2.8A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU1N60APBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2005 | Active | 1 (Unlimited) | 3 | 6.73mm | ROHS3 Compliant | No | 3 | TO-251-3 Short Leads, IPak, TO-251AA | Unknown | 6.22mm | 2.38mm | Through Hole | 329.988449mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 260 | 40 | 3 | 1 | 1 | DRAIN | Single | 36W | 9.8 ns | 4V | 36W Tc | 1.4A | SWITCHING | 7Ohm | 18 ns | SILICON | N-Channel | 7 Ω @ 840mA, 10V | 4V @ 250μA | 229pF @ 25V | 14nC @ 10V | 14ns | 20 ns | 30V | 600V | 1.4A Tc | 5.6A | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| SIHD9N60E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Cut Tape (CT) | E | Active | 1 (Unlimited) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.507mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 78W | 14 ns | 78W Tc | 9A | 150°C | 31 ns | N-Channel | 368m Ω @ 4.5A, 10V | 4.5V @ 250μA | 778pF @ 100V | 52nC @ 10V | 30V | 600V | 9A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA445EDJT-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | Active | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | PowerPAK® SC-70-6 | unknown | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | YES | S-PDSO-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 19W Tc | SWITCHING | 0.0167Ohm | 20V | SILICON | P-Channel | 16.7m Ω @ 7A, 4.5V | 1.2V @ 250μA | 2180pF @ 10V | 69nC @ 10V | 12A | 12A Tc | 20V | 50A | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFIBC30GPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | Active | 1 (Unlimited) | 150°C | -55°C | 10.63mm | ROHS3 Compliant | Lead Free | 2.5A | No | 3 | TO-220-3 Full Pack, Isolated Tab | Unknown | 9.8mm | 4.83mm | Through Hole | 6.000006g | -55°C~150°C TJ | 600V | MOSFET (Metal Oxide) | 1 | 1 | Single | 35W | 11 ns | 2.2Ohm | TO-220-3 | 35W Tc | 2.5A | 35 ns | N-Channel | 2.2Ohm @ 1.5A, 10V | 4V @ 250μA | 660pF @ 25V | 31nC @ 10V | 13ns | 14 ns | 20V | 600V | 2.5A Tc | 600V | 660pF | 10V | ±20V | 2.2 Ω | ||||||||||||||||||||||||||||||||||||
| SIHB20N50E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Bulk | 2016 | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | Single | 17 ns | 4V | 179W Tc | 19A | SWITCHING | 48 ns | SILICON | N-Channel | 184m Ω @ 10A, 10V | 4V @ 250μA | 1640pF @ 100V | 92nC @ 10V | 27ns | 25 ns | 20V | 500V | 19A Tc | 42A | 204 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IRFI9540GPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2014 | Active | 1 (Unlimited) | 175°C | -55°C | 10.63mm | ROHS3 Compliant | Lead Free | -13A | No | 3 | TO-220-3 Full Pack, Isolated Tab | Unknown | 9.8mm | 4.83mm | 200MOhm | Through Hole | 6.000006g | -55°C~175°C TJ | -100V | MOSFET (Metal Oxide) | 1 | 1 | Single | 42W | 24 ns | -4V | 200mOhm | TO-220-3 | 48W Tc | -11A | 51 ns | P-Channel | 200mOhm @ 6.6A, 10V | 4V @ 250μA | 1400pF @ 25V | 61nC @ 10V | 110ns | 86 ns | 20V | -100V | 11A Tc | 100V | 1.4nF | 10V | ±20V | 200 mΩ | ||||||||||||||||||||||||||||||||||
| SIHF22N60E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2013 | E | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 Full Pack | Unknown | 180mOhm | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | TO-220AB | Single | 35W | 18 ns | 2V | 35W Tc | 21A | SWITCHING | 66 ns | SILICON | N-Channel | 180m Ω @ 11A, 10V | 4V @ 250μA | 1920pF @ 100V | 86nC @ 10V | 27ns | 35 ns | 20V | 600V | 21A Tc | 56A | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| SI3460BDV-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | TrenchFET® | yes | Active | 1 (Unlimited) | 6 | EAR99 | 3.05mm | ROHS3 Compliant | No | 6 | SOT-23-6 Thin, TSOT-23-6 | Unknown | 1mm | 1.65mm | Surface Mount | 19.986414mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Pure Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 6 | 1 | FET General Purpose Power | 1 | Single | 2W | 5 ns | 1V | 2W Ta 3.5W Tc | 6.7A | SWITCHING | 0.027Ohm | 25 ns | SILICON | N-Channel | 27m Ω @ 5.1A, 4.5V | 1V @ 250μA | 860pF @ 10V | 24nC @ 8V | 15ns | 5 ns | 8V | 20V | 1 V | 8A | 8A Tc | 20A | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||
| SQJA60EP-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 4 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | 1.267mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | YES | R-PSSO-G4 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 45W | 9 ns | 45W Tc | 30A | 175°C | 21 ns | SILICON | N-Channel | 12.5m Ω @ 8A, 10V | 2.5V @ 250μA | 1600pF @ 25V | 30nC @ 10V | 20V | 60V | 24.6A | 30A Tc | 84A | 26 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SQ4431EY-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | Surface Mount | 506.605978mg | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 6W | 10 ns | -1.5V | 30mOhm | 8-SO | 6W Tc | 10.8A | 33 ns | P-Channel | 30mOhm @ 6A, 10V | 2.5V @ 250μA | 1265pF @ 15V | 25nC @ 10V | 12ns | 15 ns | 20V | -30V | 10.8A Tc | 30V | 1.265nF | 10V | ±20V | 30 mΩ | ||||||||||||||||||||||||||||||||||||||||
| SI4835DDY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.5mm | 4mm | 18mOhm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 40 | 8 | 1 | 1 | Single | 2.5W | 44 ns | -3V | 2.5W Ta 5.6W Tc | -8.7A | SWITCHING | 28 ns | SILICON | P-Channel | 18m Ω @ 10A, 10V | 3V @ 250μA | 1960pF @ 15V | 65nC @ 10V | 100ns | 15 ns | 25V | -30V | 13A Tc | 30V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||
| SIR401DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | Active | 1 (Unlimited) | 5 | EAR99 | 6.25mm | ROHS3 Compliant | No | 8 | PowerPAK® SO-8 | Unknown | 1.12mm | 5.26mm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | C BEND | R-PDSO-C5 | 1 | 1 | DRAIN | Single | 5W | 140 ns | -600mV | 5W Ta 39W Tc | 50A | SWITCHING | 0.0032Ohm | 300 ns | SILICON | P-Channel | 3.2m Ω @ 15A, 10V | 1.5V @ 250μA | 9080pF @ 10V | 310nC @ 10V | 130ns | 100 ns | 12V | -20V | 50A Tc | 20V | 45 mJ | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||
| IRLR024TRPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | LOGIC LEVEL COMPATIBLE | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.39mm | 6.22mm | 100mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | 260 | 40 | 3 | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 2.5W | 11 ns | 2.5W Ta 42W Tc | 14A | SWITCHING | 23 ns | SILICON | N-Channel | 100m Ω @ 8.4A, 5V | 2V @ 250μA | 870pF @ 25V | 18nC @ 5V | 110ns | 41 ns | 10V | 60V | 14A Tc | 56A | 4V 5V | ±10V |