English

All Products

View All >>
  • IRFL024NPBF

IRFL024NPBF

IRFL024NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFL024NPBF
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 621
  • Description: IRFL024NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1W Ta
Factory Lead Time 20 Weeks
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Mounting Type Surface Mount
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 75m Ω @ 2.8A, 10V
Package / Case TO-261-4, TO-261AA
Vgs(th) (Max) @ Id 4V @ 250μA
Surface Mount YES
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.8A Ta
Transistor Element Material SILICON
Gate Charge (Qg) (Max) @ Vgs 18.3nC @ 10V
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Operating Temperature -55°C~150°C TJ
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 2.8A
Packaging Tube
Drain-source On Resistance-Max 0.075Ohm
DS Breakdown Voltage-Min 55V
Published 1999
Series HEXFET®
RoHS Status ROHS3 Compliant
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
See Relate Datesheet