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  • IRFL4310TRPBF

IRFL4310TRPBF

MOSFET N-CH 100V 1.6A SOT223


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFL4310TRPBF
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 373
  • Description: MOSFET N-CH 100V 1.6A SOT223 (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1999
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 200mOhm
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 1.6A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Case Connection DRAIN
Turn On Delay Time 7.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 200m Ω @ 1.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.6A Ta
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time 18ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) 1.6A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 2.2A
Drain to Source Breakdown Voltage 100V
Recovery Time 110 ns
Max Junction Temperature (Tj) 150°C
Nominal Vgs 4 V
Min Breakdown Voltage 100V
Height 1.8mm
Length 6.6802mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet