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  • IRFL9014TRPBF

IRFL9014TRPBF

MOSFET P-CH 60V 1.8A SOT223


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRFL9014TRPBF
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 356
  • Description: MOSFET P-CH 60V 1.8A SOT223 (Kg)

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Details

Tags

Parameters
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 63ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 31 ns
Turn-Off Delay Time 9.6 ns
Continuous Drain Current (ID) -1.8A
Threshold Voltage -2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Max Junction Temperature (Tj) 150°C
Height 1.8mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 250.212891mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 500mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 2W Ta 3.1W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 500m Ω @ 1.1A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 270pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.8A Tc
See Relate Datesheet