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  • IRFL9110PBF

IRFL9110PBF

MOSFET P-CH 100V 1.1A SOT223


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRFL9110PBF
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 337
  • Description: MOSFET P-CH 100V 1.1A SOT223 (Kg)

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Details

Tags

Parameters
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Length 6.7mm
Resistance 1.2Ohm
Max Operating Temperature 150°C
Width 3.7mm
Min Operating Temperature -55°C
Radiation Hardening No
Technology MOSFET (Metal Oxide)
REACH SVHC Unknown
Number of Elements 1
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Number of Channels 1
Power Dissipation-Max 2W Ta 3.1W Tc
Element Configuration Single
Power Dissipation 2W
Turn On Delay Time 10 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 1.2Ohm @ 660mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.1A Tc
Gate Charge (Qg) (Max) @ Vgs 8.7nC @ 10V
Rise Time 27ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 17 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 1.1A
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 20V
Mount Surface Mount
Drain to Source Breakdown Voltage -100V
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Input Capacitance 200pF
Number of Pins 3
Drain to Source Resistance 1.2Ohm
Supplier Device Package SOT-223
Weight 250.212891mg
Operating Temperature -55°C~150°C TJ
Rds On Max 1.2 Ω
Packaging Tube
Height 1.45mm
Published 2015
See Relate Datesheet