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  • IRFP150MPBF

IRFP150MPBF

IRFP150MPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFP150MPBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 491
  • Description: IRFP150MPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 140A
Avalanche Energy Rating (Eas) 420 mJ
Nominal Vgs 4 V
Height 21.1mm
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Length 16.129mm
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Width 4.826mm
Operating Temperature -55°C~175°C TJ
Radiation Hardening No
Packaging Tube
Published 1998
Series HEXFET®
REACH SVHC No SVHC
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
RoHS Status ROHS3 Compliant
Resistance 36MOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Lead Free Lead Free
Number of Elements 1
Power Dissipation-Max 160W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 160W
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 36m Ω @ 23A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 42A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 56ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 42A
Threshold Voltage 4V
JEDEC-95 Code TO-247AC
See Relate Datesheet