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  • IRFP4227PBF

IRFP4227PBF

MOSFET N-CH 200V 65A TO-247AC


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFP4227PBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 418
  • Description: MOSFET N-CH 200V 65A TO-247AC (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Turn On Delay Time 33 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 46A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 65A Tc
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 31 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 65A
Threshold Voltage 5V
Factory Lead Time 12 Weeks
JEDEC-95 Code TO-247AC
Contact Plating Tin
Mount Through Hole
Gate to Source Voltage (Vgs) 30V
Mounting Type Through Hole
Package / Case TO-247-3
Drain to Source Breakdown Voltage 200V
Number of Pins 3
Transistor Element Material SILICON
Pulsed Drain Current-Max (IDM) 260A
Dual Supply Voltage 240V
Operating Temperature -40°C~175°C TJ
Packaging Tube
Recovery Time 150 ns
Published 2007
Series HEXFET®
Nominal Vgs 5 V
Part Status Active
Height 20.7mm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Length 15.87mm
Number of Terminations 3
Width 5.3086mm
Termination Through Hole
Radiation Hardening No
REACH SVHC No SVHC
ECCN Code EAR99
RoHS Status ROHS3 Compliant
Resistance 25MOhm
Lead Free Lead Free
Additional Feature FAST SWITCHING
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 330W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 330W
Case Connection DRAIN
See Relate Datesheet