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  • IRFP4232PBF

IRFP4232PBF

IRFP4232PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFP4232PBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 851
  • Description: IRFP4232PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package TO-247AC
Operating Temperature -40°C~175°C TJ
Packaging Bulk
Published 2007
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Resistance 35.7MOhm
Max Operating Temperature 175°C
Min Operating Temperature -40°C
Voltage - Rated DC 250V
Technology MOSFET (Metal Oxide)
Current Rating 60A
Number of Elements 1
Power Dissipation-Max 430W Tc
Element Configuration Single
Power Dissipation 430W
Turn On Delay Time 37 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 35.7mOhm @ 42A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7290pF @ 25V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 64 ns
Continuous Drain Current (ID) 60A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 250V
Dual Supply Voltage 250V
Input Capacitance 7.29nF
Drain to Source Resistance 35.7mOhm
Rds On Max 35.7 mΩ
Nominal Vgs 5 V
Height 20.7mm
Length 15.87mm
Width 5.3086mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet