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  • IRFP4310ZPBF

IRFP4310ZPBF

Single N-Channel 100 V 6 mOhm 120 nC HEXFET® Power Mosfet - TO-247-3AC


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFP4310ZPBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 139
  • Description: Single N-Channel 100 V 6 mOhm 120 nC HEXFET® Power Mosfet - TO-247-3AC (Kg)

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Details

Tags

Parameters
Part Status Active
Dual Supply Voltage 100V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
Recovery Time 40 ns
Nominal Vgs 4 V
ECCN Code EAR99
Resistance 6MOhm
Height 20.7mm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Length 15.87mm
Number of Elements 1
Width 5.3086mm
Power Dissipation-Max 280W Tc
Radiation Hardening No
Element Configuration Single
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Operating Mode ENHANCEMENT MODE
Lead Free Lead Free
Power Dissipation 280W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 6860pF @ 50V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Rise Time 60ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Factory Lead Time 12 Weeks
Vgs (Max) ±20V
Mount Through Hole
Fall Time (Typ) 57 ns
Mounting Type Through Hole
Turn-Off Delay Time 55 ns
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Continuous Drain Current (ID) 134A
Threshold Voltage 4V
Operating Temperature -55°C~175°C TJ
JEDEC-95 Code TO-247AC
Packaging Bulk
Gate to Source Voltage (Vgs) 20V
Published 2004
Series HEXFET®
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 560A
See Relate Datesheet