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  • IRFP4468PBF

IRFP4468PBF

MOSFET N-CH 100V 195A TO-247AC


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFP4468PBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 346
  • Description: MOSFET N-CH 100V 195A TO-247AC (Kg)

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Details

Tags

Parameters
Vgs (Max) ±20V
Fall Time (Typ) 260 ns
Turn-Off Delay Time 160 ns
Continuous Drain Current (ID) 290A
Threshold Voltage 4V
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Factory Lead Time 12 Weeks
Contact Plating Tin
Avalanche Energy Rating (Eas) 740 mJ
Mount Through Hole
Max Junction Temperature (Tj) 175°C
Mounting Type Through Hole
Nominal Vgs 4 V
Package / Case TO-247-3
Height 24.99mm
Number of Pins 3
Length 15.87mm
Transistor Element Material SILICON
Width 5.3086mm
REACH SVHC No SVHC
Operating Temperature -55°C~175°C TJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Packaging Tube
Published 2004
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 2.6MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 250
Time@Peak Reflow Temperature-Max (s) 30
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 520W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 520W
Case Connection DRAIN
Turn On Delay Time 52 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.6m Ω @ 180A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 19860pF @ 50V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Gate Charge (Qg) (Max) @ Vgs 540nC @ 10V
Rise Time 230ns
Drive Voltage (Max Rds On,Min Rds On) 10V
See Relate Datesheet