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IRFP4768PBF

IRFP4768PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFP4768PBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 617
  • Description: IRFP4768PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 17.5MOhm
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 520W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 520W
Case Connection DRAIN
Turn On Delay Time 36 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17.5m Ω @ 56A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 10880pF @ 50V
Current - Continuous Drain (Id) @ 25°C 93A Tc
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V
Rise Time 160ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 110 ns
Turn-Off Delay Time 57 ns
Continuous Drain Current (ID) 93A
Threshold Voltage 5V
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 250V
Dual Supply Voltage 250V
Avalanche Energy Rating (Eas) 770 mJ
Nominal Vgs 5 V
Height 20.7mm
Length 15.87mm
Width 5.3086mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
Series HEXFET®
Part Status Active
See Relate Datesheet