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  • IRFP7430PBF

IRFP7430PBF

IRFP7430PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFP7430PBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 806
  • Description: IRFP7430PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
Series HEXFET®, StrongIRFET™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 1.3MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 366W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 366W
Case Connection DRAIN
Turn On Delay Time 32 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.3m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.9V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 14240pF @ 25V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Gate Charge (Qg) (Max) @ Vgs 460nC @ 10V
Rise Time 105ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 100 ns
Turn-Off Delay Time 160 ns
Continuous Drain Current (ID) 195A
Threshold Voltage 2.2V
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 722 mJ
Recovery Time 52 ns
Height 20.7mm
Length 15.87mm
Width 5.31mm
Radiation Hardening No
REACH SVHC No SVHC
See Relate Datesheet