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  • IRFP9140PBF

IRFP9140PBF

MOSFET P-CH 100V 21A TO-247AC


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRFP9140PBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 687
  • Description: MOSFET P-CH 100V 21A TO-247AC (Kg)

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Shipping Method

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Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package TO-247-3
Weight 38.000013g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 200mOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC -100V
Technology MOSFET (Metal Oxide)
Current Rating -21A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 180W Tc
Element Configuration Single
Power Dissipation 180W
Turn On Delay Time 16 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 200mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Gate Charge (Qg) (Max) @ Vgs 61nC @ 10V
Rise Time 73ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 57 ns
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) -21A
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -100V
Input Capacitance 1.4nF
Recovery Time 260 ns
Drain to Source Resistance 200mOhm
Rds On Max 200 mΩ
Nominal Vgs -4 V
Height 20.7mm
Length 15.87mm
Width 5.31mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet