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IRFP9240PBF

Trans MOSFET P-CH 200V 12A 3-Pin(3+Tab) TO-247AC


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRFP9240PBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 276
  • Description: Trans MOSFET P-CH 200V 12A 3-Pin(3+Tab) TO-247AC (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package TO-247-3
Weight 38.000013g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Resistance 500mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -200V
Technology MOSFET (Metal Oxide)
Current Rating -12A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 150W Tc
Element Configuration Single
Power Dissipation 150W
Turn On Delay Time 14 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 500mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Rise Time 43ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 38 ns
Turn-Off Delay Time 39 ns
Continuous Drain Current (ID) -12A
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -200V
Dual Supply Voltage -200V
Input Capacitance 1.2nF
Recovery Time 300 ns
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 500mOhm
Rds On Max 500 mΩ
Nominal Vgs -4 V
Height 25.11mm
Length 15.87mm
Width 5.31mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet