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  • IRFPC50PBF

IRFPC50PBF

MOSFET N-CH 600V 11A TO-247AC


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRFPC50PBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 912
  • Description: MOSFET N-CH 600V 11A TO-247AC (Kg)

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Power Dissipation 180W
Turn On Delay Time 18 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 600mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Rise Time 37ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 36 ns
Turn-Off Delay Time 88 ns
Continuous Drain Current (ID) 11A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
Input Capacitance 2.7nF
Recovery Time 830 ns
Drain to Source Resistance 600mOhm
Rds On Max 600 mΩ
Height 20.7mm
Length 15.87mm
Width 5.31mm
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package TO-247-3
Weight 38.000013g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 600mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Current Rating 11A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 180W Tc
Element Configuration Single
See Relate Datesheet