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  • IRFPE40PBF

IRFPE40PBF

MOSFET N-CH 800V 5.4A TO-247AC


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRFPE40PBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 970
  • Description: MOSFET N-CH 800V 5.4A TO-247AC (Kg)

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Details

Tags

Parameters
Current Rating 5.4A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Lead Free Lead Free
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 150W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 150W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2 Ω @ 3.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.4A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Rise Time 36ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 32 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 5.4A
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 22A
Avalanche Energy Rating (Eas) 490 mJ
Recovery Time 830 ns
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Nominal Vgs 4 V
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Height 20.7mm
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Length 15.87mm
Number of Terminations 3
Resistance 2Ohm
Width 5.31mm
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Radiation Hardening No
Voltage - Rated DC 800V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
RoHS Status ROHS3 Compliant
See Relate Datesheet