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  • IRFPE50PBF

IRFPE50PBF

MOSFET N-CH 800V 7.8A TO-247AC


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRFPE50PBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 376
  • Description: MOSFET N-CH 800V 7.8A TO-247AC (Kg)

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Details

Tags

Parameters
Termination Through Hole
Resistance 1.2Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 800V
Technology MOSFET (Metal Oxide)
Current Rating 7.8A
Lead Pitch 5.45mm
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 190W Tc
Element Configuration Single
Power Dissipation 190W
Turn On Delay Time 19 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.2Ohm @ 4.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.8A Tc
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Rise Time 38ns
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 39 ns
Turn-Off Delay Time 120 ns
Continuous Drain Current (ID) 7.8A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 800V
Dual Supply Voltage 800V
Input Capacitance 3.1nF
Recovery Time 980 ns
Drain to Source Resistance 1.2Ohm
Rds On Max 1.2 Ω
Nominal Vgs 4 V
Height 20.7mm
Length 15.87mm
Width 5.31mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package TO-247-3
Weight 38.000013g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
See Relate Datesheet