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  • IRFPG30PBF

IRFPG30PBF

MOSFET N-CH 1000V 3.1A TO-247AC


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRFPG30PBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 510
  • Description: MOSFET N-CH 1000V 3.1A TO-247AC (Kg)

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Details

Tags

Parameters
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package TO-247-3
Weight 38.000013g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 5Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 125W Tc
Element Configuration Single
Power Dissipation 125W
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 980pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.1A Tc
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Rise Time 24ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 29 ns
Turn-Off Delay Time 89 ns
Continuous Drain Current (ID) 3.1A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Input Capacitance 980pF
Drain to Source Resistance 5Ohm
Rds On Max 5 Ω
Nominal Vgs 4 V
Height 20.7mm
Length 15.87mm
Width 5.31mm
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 8 Weeks
Mount Through Hole
See Relate Datesheet