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IRFR18N15DPBF

IRFR18N15DPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFR18N15DPBF
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 354
  • Description: IRFR18N15DPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Transistor Application SWITCHING
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Rds On (Max) @ Id, Vgs 125m Ω @ 11A, 10V
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Vgs(th) (Max) @ Id 5.5V @ 250μA
Packaging Tube
Published 2000
Series HEXFET®
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 25V
JESD-609 Code e3
Current - Continuous Drain (Id) @ 25°C 18A Tc
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Number of Terminations 2
Drain to Source Voltage (Vdss) 150V
ECCN Code EAR99
Drive Voltage (Max Rds On,Min Rds On) 10V
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Vgs (Max) ±30V
JEDEC-95 Code TO-252AA
Technology MOSFET (Metal Oxide)
Drain Current-Max (Abs) (ID) 18A
Terminal Position SINGLE
Terminal Form GULL WING
Drain-source On Resistance-Max 0.125Ohm
Peak Reflow Temperature (Cel) 260
Pulsed Drain Current-Max (IDM) 72A
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
DS Breakdown Voltage-Min 150V
Avalanche Energy Rating (Eas) 200 mJ
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
RoHS Status ROHS3 Compliant
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 110W Tc
See Relate Datesheet