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IRFR3709ZTRLPBF

MOSFET N-CH 30V 86A DPAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFR3709ZTRLPBF
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 450
  • Description: MOSFET N-CH 30V 86A DPAK (Kg)

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Details

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Parameters
Drain-source On Resistance-Max 0.0065Ohm
Pulsed Drain Current-Max (IDM) 340A
Terminal Form GULL WING
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 100 mJ
Peak Reflow Temperature (Cel) 260
RoHS Status ROHS3 Compliant
Reach Compliance Code not_compliant
Factory Lead Time 12 Weeks
Time@Peak Reflow Temperature-Max (s) 30
Mounting Type Surface Mount
JESD-30 Code R-PSSO-G2
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Qualification Status Not Qualified
Surface Mount YES
Number of Elements 1
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Configuration SINGLE WITH BUILT-IN DIODE
Packaging Tape & Reel (TR)
Power Dissipation-Max 79W Tc
Published 2004
Series HEXFET®
Operating Mode ENHANCEMENT MODE
JESD-609 Code e3
Case Connection DRAIN
Part Status Active
FET Type N-Channel
Transistor Application SWITCHING
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Rds On (Max) @ Id, Vgs 6.5m Ω @ 15A, 10V
Number of Terminations 2
Vgs(th) (Max) @ Id 2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2330pF @ 15V
ECCN Code EAR99
Current - Continuous Drain (Id) @ 25°C 86A Tc
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Gate Charge (Qg) (Max) @ Vgs 26nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Terminal Position SINGLE
Vgs (Max) ±20V
JEDEC-95 Code TO-252AA
Drain Current-Max (Abs) (ID) 30A
See Relate Datesheet