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IRFR3806TRPBF

MOSFET N-CH 60V 43A DPAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFR3806TRPBF
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 197
  • Description: MOSFET N-CH 60V 43A DPAK (Kg)

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Details

Tags

Parameters
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 71W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 71W
Turn On Delay Time 6.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15.8m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 50V
Current - Continuous Drain (Id) @ 25°C 43A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 40ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 47 ns
Turn-Off Delay Time 49 ns
Continuous Drain Current (ID) 43mA
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Factory Lead Time 12 Weeks
Nominal Vgs 2 V
Mount Surface Mount
Height 2.3876mm
Mounting Type Surface Mount
Length 6.7056mm
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Width 6.22mm
Radiation Hardening No
Number of Pins 3
Transistor Element Material SILICON
REACH SVHC No SVHC
Operating Temperature -55°C~175°C TJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 15.8MOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
See Relate Datesheet