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  • IRFR6215TRLPBF

IRFR6215TRLPBF

IRFR6215TRLPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFR6215TRLPBF
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 821
  • Description: IRFR6215TRLPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 110W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 295m Ω @ 6.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Factory Lead Time 12 Weeks
Input Capacitance (Ciss) (Max) @ Vds 860pF @ 25V
Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 13A Tc
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V
Surface Mount YES
Drain to Source Voltage (Vdss) 150V
Transistor Element Material SILICON
Drive Voltage (Max Rds On,Min Rds On) 10V
Operating Temperature -55°C~175°C TJ
Vgs (Max) ±20V
JEDEC-95 Code TO-252AA
Drain Current-Max (Abs) (ID) 13A
Packaging Tape & Reel (TR)
Drain-source On Resistance-Max 0.295Ohm
Published 2004
Pulsed Drain Current-Max (IDM) 44A
Series HEXFET®
DS Breakdown Voltage-Min 150V
JESD-609 Code e3
Avalanche Energy Rating (Eas) 310 mJ
Part Status Active
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
See Relate Datesheet