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  • IRFR7446PBF

IRFR7446PBF

Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) DPAK Tube


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFR7446PBF
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 331
  • Description: Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) DPAK Tube (Kg)

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Details

Tags

Parameters
Rise Time 13ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 56A
Threshold Voltage 3V
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 520A
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 3.949996g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET®, StrongIRFET™
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 98W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 9.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.9m Ω @ 56A, 10V
Vgs(th) (Max) @ Id 3.9V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 3150pF @ 25V
Current - Continuous Drain (Id) @ 25°C 56A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
See Relate Datesheet