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  • IRFS3004TRLPBF

IRFS3004TRLPBF

MOSFET N-CH 40V 195A D2PAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFS3004TRLPBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 302
  • Description: MOSFET N-CH 40V 195A D2PAK (Kg)

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FedEx International, 5-7 business days.

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Details

Tags

Parameters
Drain to Source Breakdown Voltage 40V
Factory Lead Time 12 Weeks
Mount Surface Mount
Height 4.826mm
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Length 10.668mm
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Width 9.652mm
Packaging Tape & Reel (TR)
Published 2009
Series HEXFET®
Radiation Hardening No
JESD-609 Code e3
RoHS Status ROHS3 Compliant
Part Status Active
Lead Free Lead Free
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 380W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 380W
Case Connection DRAIN
Turn On Delay Time 23 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.75m Ω @ 195A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 195A Ta
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Rise Time 220ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 130 ns
Turn-Off Delay Time 90 ns
Continuous Drain Current (ID) 240A
Gate to Source Voltage (Vgs) 20V
See Relate Datesheet