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  • IRFS3307ZPBF

IRFS3307ZPBF

MOSFET N-CH 75V 120A D2PAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFS3307ZPBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 465
  • Description: MOSFET N-CH 75V 120A D2PAK (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Input Capacitance (Ciss) (Max) @ Vds 4750pF @ 50V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 64ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 65 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 120A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 75V
Dual Supply Voltage 75V
Recovery Time 50 ns
Nominal Vgs 4 V
Height 2.39mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Series HEXFET®
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
ECCN Code EAR99
Resistance 5.8MOhm
Voltage - Rated DC 75V
Technology MOSFET (Metal Oxide)
Current Rating 120A
Power Dissipation-Max 230W Tc
Element Configuration Single
Power Dissipation 230W
Turn On Delay Time 15 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.8m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150μA
See Relate Datesheet