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  • IRFS4310ZPBF

IRFS4310ZPBF

IRFS4310ZPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFS4310ZPBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 937
  • Description: IRFS4310ZPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Resistance 6MOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 250W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 250W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 6860pF @ 50V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Rise Time 60ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 57 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 127A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 120A
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 560A
Dual Supply Voltage 100V
Recovery Time 40 ns
Nominal Vgs 4 V
Height 4.83mm
Length 10.668mm
Width 9.65mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Series HEXFET®
See Relate Datesheet