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  • IRFS59N10DTRLP

IRFS59N10DTRLP

MOSFET N-CH 100V 59A D2PAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFS59N10DTRLP
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 529
  • Description: MOSFET N-CH 100V 59A D2PAK (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET®
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 25mOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 59A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 3.8W Ta 200W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 200W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 35.4A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2450pF @ 25V
Current - Continuous Drain (Id) @ 25°C 59A Tc
Gate Charge (Qg) (Max) @ Vgs 114nC @ 10V
Rise Time 90ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 59A
Threshold Voltage 5.5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Nominal Vgs 5.5 V
Height 4.826mm
Length 10.668mm
Width 10.54mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
See Relate Datesheet