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  • IRFS7440PBF

IRFS7440PBF

Transistor MOSFET N-ch 40V 120A D2PAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFS7440PBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 840
  • Description: Transistor MOSFET N-ch 40V 120A D2PAK (Kg)

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Details

Tags

Parameters
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2007
Series HEXFET®, StrongIRFET™
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 208W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 208W
Case Connection DRAIN
Turn On Delay Time 24 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.5m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.9V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 4730pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V
Rise Time 68ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 68 ns
Turn-Off Delay Time 115 ns
Continuous Drain Current (ID) 120A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 208A
Drain-source On Resistance-Max 0.0025Ohm
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 772A
Recovery Time 24 ns
Nominal Vgs 3 V
Height 4.83mm
Length 10.67mm
Width 9.65mm
See Relate Datesheet