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  • IRFS7730PBF

IRFS7730PBF

IRFS7730PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFS7730PBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 680
  • Description: IRFS7730PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Gate Charge (Qg) (Max) @ Vgs 407nC @ 10V
Rise Time 120ns
Drain to Source Voltage (Vdss) 75V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 115 ns
Turn-Off Delay Time 180 ns
Continuous Drain Current (ID) 195A
Gate to Source Voltage (Vgs) 20V
Height 4.83mm
Length 10.67mm
Width 9.65mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 3.949996g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series HEXFET®, StrongIRFET™
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 375W Tc
Element Configuration Single
Power Dissipation 375W
Turn On Delay Time 21 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.6m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 13660pF @ 25V
Current - Continuous Drain (Id) @ 25°C 195A Tc
See Relate Datesheet