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  • IRFS7787TRLPBF

IRFS7787TRLPBF

MOSFET N-CH 75V 76A D2PAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFS7787TRLPBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 872
  • Description: MOSFET N-CH 75V 76A D2PAK (Kg)

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The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 3.949996g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series HEXFET®, StrongIRFET™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 125W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.4m Ω @ 46A, 10V
Vgs(th) (Max) @ Id 3.7V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 4020pF @ 25V
Current - Continuous Drain (Id) @ 25°C 76A Tc
Gate Charge (Qg) (Max) @ Vgs 109nC @ 10V
Rise Time 48ns
Drain to Source Voltage (Vdss) 75V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 39 ns
Turn-Off Delay Time 51 ns
Continuous Drain Current (ID) 76A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0084Ohm
Pulsed Drain Current-Max (IDM) 280A
DS Breakdown Voltage-Min 75V
Avalanche Energy Rating (Eas) 209 mJ
Height 4.83mm
Length 10.67mm
Width 9.65mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet