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  • IRFS9N60APBF

IRFS9N60APBF

MOSFET N-CH 600V 9.2A D2PAK


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRFS9N60APBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 378
  • Description: MOSFET N-CH 600V 9.2A D2PAK (Kg)

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Details

Tags

Parameters
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 170W Tc
Element Configuration Single
Power Dissipation 170W
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 750mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9.2A Tc
Factory Lead Time 8 Weeks
Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V
Mount Surface Mount
Rise Time 25ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Mounting Type Surface Mount
Vgs (Max) ±30V
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Fall Time (Typ) 22 ns
Number of Pins 3
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 9.2A
Supplier Device Package D2PAK
Threshold Voltage 4V
Weight 1.437803g
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Input Capacitance 1.4nF
Drain to Source Resistance 750mOhm
Rds On Max 750 mΩ
Operating Temperature -55°C~150°C TJ
Height 4.83mm
Packaging Tube
Length 10.67mm
Width 9.65mm
Published 2014
Radiation Hardening No
Part Status Active
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Lead Free
Resistance 750mOhm
Max Operating Temperature 150°C
See Relate Datesheet