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  • IRFSL38N20DPBF

IRFSL38N20DPBF

INFINEON IRFSL38N20DPBF MOSFET Transistor, N Channel, 43 A, 200 V, 0.054 ohm, 10 V, 5 VNew


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFSL38N20DPBF
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Datasheet: PDF
  • Stock: 443
  • Description: INFINEON IRFSL38N20DPBF MOSFET Transistor, N Channel, 43 A, 200 V, 0.054 ohm, 10 V, 5 VNew (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Packaging Tube
Published 2004
Series HEXFET®
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Subcategory FET General Purpose Power
Max Power Dissipation 300W
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.8W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 54m Ω @ 26A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 43A Tc
Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V
Rise Time 95ns
Drain to Source Voltage (Vdss) 200V
Fall Time (Typ) 47 ns
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) 44A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.054Ohm
DS Breakdown Voltage-Min 200V
Avalanche Energy Rating (Eas) 460 mJ
Height 9.65mm
Length 10.67mm
Width 4.826mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet