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  • IRFU120ZPBF

IRFU120ZPBF

MOSFET N-CH 100V 8.7A I-PAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFU120ZPBF
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 588
  • Description: MOSFET N-CH 100V 8.7A I-PAK (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Input Capacitance 310pF
Recovery Time 36 ns
Drain to Source Resistance 190mOhm
Rds On Max 190 mΩ
Nominal Vgs 4 V
Height 6.22mm
Length 6.7056mm
Width 2.3876mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Supplier Device Package IPAK (TO-251)
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2003
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Resistance 190MOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating 8.7A
Power Dissipation-Max 35W Tc
Power Dissipation 35W
Turn On Delay Time 8.3 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 190mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 310pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8.7A Tc
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Rise Time 26ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 23 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 8.7A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
See Relate Datesheet