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IRFU3410PBF

MOSFET N-CH 100V 31A I-PAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFU3410PBF
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 819
  • Description: MOSFET N-CH 100V 31A I-PAK (Kg)

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Shipping Cost

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Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Power Dissipation 110W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 39m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1690pF @ 25V
Current - Continuous Drain (Id) @ 25°C 31A Tc
Factory Lead Time 12 Weeks
Mount Through Hole
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Mounting Type Through Hole
Rise Time 27ns
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Drive Voltage (Max Rds On,Min Rds On) 10V
Transistor Element Material SILICON
Vgs (Max) ±20V
Operating Temperature -55°C~175°C TJ
Fall Time (Typ) 13 ns
Packaging Tube
Published 2004
Turn-Off Delay Time 40 ns
Series HEXFET®
Continuous Drain Current (ID) 31A
JESD-609 Code e3
Part Status Active
Threshold Voltage 4V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Gate to Source Voltage (Vgs) 20V
Number of Terminations 3
Drain to Source Breakdown Voltage 100V
ECCN Code EAR99
Dual Supply Voltage 100V
Resistance 39Ohm
Nominal Vgs 4 V
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Height 6.22mm
Subcategory FET General Purpose Power
Length 6.7056mm
Voltage - Rated DC 100V
Width 2.3876mm
Technology MOSFET (Metal Oxide)
Radiation Hardening No
Terminal Position SINGLE
REACH SVHC No SVHC
Peak Reflow Temperature (Cel) 260
RoHS Status ROHS3 Compliant
Current Rating 31A
Lead Free Lead Free
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3W Ta 110W Tc
Operating Mode ENHANCEMENT MODE
See Relate Datesheet